Multicrystalline silicon wafers

Multicrystalline silicon wafers 1.Material: multicrystalline silicon 2.Growth method: directional solidification 3.Conductivity type: p-type (boron doped), astm f42 4.Oxygen concentration: n 1, 0x1017 at./cm3, astm f 121 5.Carbon concentration: n 1x1018 at./cm3, astm f 121 * oxygen content measurement by astm 1188 and used calculation coefficient for ppm atomic is 4, 9 and and for at/cm3 is 2, 45e+17. 6.Square side: (156.0 0.5) mm 7.Symmetry as per the drawing in the enclosure no. 1 8.Thickness: (200 30) &micro;m, astm f 533 9.Ttv: < 50 &micro;m, astm f657 10.Bow < 50 &micro;m, astm f 534 11.Surface saw damage depth &micro;m < 20 (< 15 typically) 12.Saw traces &micro;m 2 &micro;s, astm f 28 15.Surface: as-cut and cleaned; visible contamination, oil or grease, finger prints, soap stains, slurry stains, epoxy/water stains, cracks are not allowed; edge chips under 1 mm from the edge of the wafer are allowed. . 16.Customer may request to receive reference samples 17.Wafers are being stacked into batches of 50-100 wafers each. Then it is sealed into polyethylene film. Protective paper among wafers is upon customer request. 500 -600 wafers in total are being packed into styrofoam box. Styrofoam boxes are being packed into pasteboard cases. Wafers are being packed in such a manner as to ensure minimal damage to the product during transportation. 18.All polystyrene boxes of wafers are identified with: box number; type of wafer; number of wafers per box; all contributing ingots numbers; thickness of wafers; date of packing / output inspection. Geometry: Square side angle:900, 5 Chamfer: 1, 5 mm0, 5mm at 452