Crystal growth furnace
- Estimate pricing$ 2.86 – $ 200Est. category range
- AvailabilityIn stock
- Properties modelae-85, ae-95, ae-120
- Ingot diameter6 - 8 inch, 8 - 10 inch, 8-16 inch
- Max charge amount95 kg, 150 kg, 260 kg
- Main line pump rate70 sl/sec, 70 sl/sec, 150 sl/sec
Products Description
Ae-6000c-type flexible shaft crystal growth furnace is to melt silicon semiconductor materials by graphite resistance heater in an inert gas environment, using czochralski technique dislocation-free crystal growth equipment, it can produce high quality single crystal which for solar photovoltaic devices. Main technical parameters: Properties model ae-85 ae-95 ae-120 Diameter of growth tank (mm) 850 950 1200 Ingot diameter (inch) 6 - 8 8 - 10 8-16 Silica crucible size (inch) 18-20 22-24 24-28 Max charge amount (kg) 95 150 260 Max crystal length (mm) 2000 2000 2000 Seed pulling ratemm/hr 0-508 0-508 0-508 Seed jog speed (mm/min) 0-508 0-508 0-508 Seed rotation rate (rpm) 0-40 0-40 0-40 Crucible elevate rate (mm/hr) 0-128 0-128 0-128 Crucible jog speed (mm/min) 0-50.8 0-50.8 0-50.8 Crucible rotation rate (rpm) 0-20 0-20 0-20 Crucible travel stroke (mm) 400 420 480 Maximum weight for Crucible support (kg) 165 230 450 Main line pump rate (sl/sec) 70 70 150 Auxiliary pump rate (sl/sec) 8 8 8 Ultimate pressure (pa) less than 4 less than 4 less than 4 Permissible leak rate (pa/hr) less than 6 less than 6 less than 6 Gas flow control range (sl/min) 4-200 4-200 4-200 Working pressure range (pa) 1500-5000 1500-5000 1500-5000 Ac power input (3 phase, 380v) 140 kw 200 kw 250 kw Number of heating elements 1 2 2 Magnetic coil optional optional optional.
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Products Specification
- Properties modelae-85, ae-95, ae-120
- Ingot diameter6 - 8 inch, 8 - 10 inch, 8-16 inch
- Max charge amount95 kg, 150 kg, 260 kg
- Main line pump rate70 sl/sec, 70 sl/sec, 150 sl/sec
- Auxiliary pump rate8 sl/sec, 8 sl/sec, 8 sl/sec
- Ultimate pressureless than 4 pa
- Permissible leak rateless than 6 pa/hr
- Ac power input140 kw, 200 kw, 250 kw
- Number of heating elements1, 2, 2
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Crystal growth furnace is used to melt silicon semiconductor materials by graphite resistance heater in an inert gas environment using czochralski technique dislocation-free crystal growth equipment to produce single crystal for solar photovoltaic devices.
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About Supplier
Xian Abundance Electric Technology Co., Ltd. is a premier leather products export company, established in 2010 and based in China. With a decade of experience, Xian Abundance Electric Technology Co., Ltd. has built a reputation for delivering high-quality leather goods to clients across the globe. The company specializes in a wide range of leather products, including bags, wallets, belts, and custom leather accessories, all crafted with precision and attention to detail. Leveraging advanced manufacturing techniques and stringent quality control processes, Xian Abundance Electric Technology Co., Ltd. ensures that each product meets the highest standards. The company’s commitment to excellence, timely delivery, and customer satisfaction has made it a trusted name in the international market.Xian Abundance Electric Technology Co., Ltd. continues to expand its global footprint, exporting its superior leather products to various countries, while maintaining strong relationships with clients worldwide.
Supplier Details for Crystal growth furnace
- Established - 16 Oct, 2026
- Business Type - Contact Seller
- Deals in Product Type - Agriculture
- Country - China
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Xian Abundance Electric Technology Co., Ltd., a reliable B2B trader from China, dispatches Crystal growth furnace primarily through the port at China. Packaging types (e.g., bulk, custom, eco-friendly) and estimated pricing may vary based on order volume and destination. To get detailed logistics and pricing information, reach out via the Inquire Now button or Sign Up for direct supplier interaction.
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