Crystal growth furnace

Ae-6000c-type flexible shaft crystal growth furnace is to melt silicon semiconductor materials by graphite resistance heater in an inert gas environment, using czochralski technique dislocation-free crystal growth equipment, it can produce high quality single crystal which for solar photovoltaic devices. Main technical parameters: Properties model ae-85 ae-95 ae-120 Diameter of growth tank (mm) 850 950 1200 Ingot diameter (inch) 6 - 8 8 - 10 8-16 Silica crucible size (inch) 18-20 22-24 24-28 Max charge amount (kg) 95 150 260 Max crystal length (mm) 2000 2000 2000 Seed pulling ratemm/hr 0-508 0-508 0-508 Seed jog speed (mm/min) 0-508 0-508 0-508 Seed rotation rate (rpm) 0-40 0-40 0-40 Crucible elevate rate (mm/hr) 0-128 0-128 0-128 Crucible jog speed (mm/min) 0-50.8 0-50.8 0-50.8 Crucible rotation rate (rpm) 0-20 0-20 0-20 Crucible travel stroke (mm) 400 420 480 Maximum weight for Crucible support (kg) 165 230 450 Main line pump rate (sl/sec) 70 70 150 Auxiliary pump rate (sl/sec) 8 8 8 Ultimate pressure (pa) less than 4 less than 4 less than 4 Permissible leak rate (pa/hr) less than 6 less than 6 less than 6 Gas flow control range (sl/min) 4-200 4-200 4-200 Working pressure range (pa) 1500-5000 1500-5000 1500-5000 Ac power input (3 phase, 380v) 140 kw 200 kw 250 kw Number of heating elements 1 2 2 Magnetic coil optional optional optional.